STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG
- RS Stock No.:
- 215-220
- Mfr. Part No.:
- SCT012H90G3AG
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
Kr.595 22
(exc. VAT)
Kr.744 02
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 1 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 595,22 |
| 10 + | Kr. 535,85 |
*price indicative
- RS Stock No.:
- 215-220
- Mfr. Part No.:
- SCT012H90G3AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | H2PAK-7 | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 138nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.8V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 625W | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.25mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Width | 10.4 mm | |
| Height | 4.8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type H2PAK-7 | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 138nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.8V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 625W | ||
Maximum Operating Temperature 175°C | ||
Length 15.25mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Width 10.4 mm | ||
Height 4.8mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Related links
- STMicroelectronics SCT SiC N-Channel MOSFET 900 V, 7-Pin H2PAK-7 SCT012H90G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 7-Pin H2PAK-7 SCT070H120G3-7
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 7-Pin H2PAK-7 SCT070H120G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 7-Pin H2PAK-7 SCT040H120G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET 650 V, 7-Pin H2PAK-7 SCT027H65G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET 650 V, 7-Pin H2PAK-7 SCT018H65G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET Module 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG
- STMicroelectronics SCT SiC N-Channel MOSFET Module 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG