Nexperia PSMN1R1-30YLE Type N-Channel MOSFET, 265 A, 30 V Enhancement, 5-Pin LFPAK PSMN1R1-30YLEX

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Subtotal (1 tape of 1 unit)*

Kr.25 85 

(exc. VAT)

Kr.32 31 

(inc. VAT)

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1 - 9Kr. 25,85
10 - 99Kr. 23,34
100 - 499Kr. 21,51
500 - 999Kr. 19,91
1000 +Kr. 17,85

*price indicative

Packaging Options:
RS Stock No.:
219-435
Mfr. Part No.:
PSMN1R1-30YLEX
Brand:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

265A

Maximum Drain Source Voltage Vds

30V

Series

PSMN1R1-30YLE

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

192W

Typical Gate Charge Qg @ Vgs

13nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel ASFET is optimized for low RDS on and strong safe operating area, making it Ideal for hot-swap, inrush, and linear-mode applications. It's perfect for e-Fuse, DC switches, load switches, and battery protection in 12V to 20V systems.

Low leakage less than 1 μA at 25 °C

Copper clip for low parasitic inductance and resistance

High reliability LFPAK package and qualified to 175 °C

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