Nexperia MOSFETs Type N-Channel MOSFET, 330 A, 55 V Enhancement, 5-Pin LFPAK PSMN1R2-55SLHAX

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Kr.55 41 

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Kr.69 26 

(inc. VAT)

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Packaging Options:
RS Stock No.:
219-464
Mfr. Part No.:
PSMN1R2-55SLHAX
Brand:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

330A

Maximum Drain Source Voltage Vds

55V

Series

MOSFETs

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.03mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

180nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Height

1.6mm

Width

8 mm

Length

8mm

Automotive Standard

No

COO (Country of Origin):
MY
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Avalanche rated and 100 % tested

Superfast switching with soft body diode recovery for low spiking and ringing

Narrow VGS(th) rating for easy paralleling and improved current sharing

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