ROHM QH8 2 Type N-Channel MOSFET, 100 V Enhancement, 8-Pin TSMT-8 QH8KE5TCR
- RS Stock No.:
- 264-562
- Mfr. Part No.:
- QH8KE5TCR
- Brand:
- ROHM
Bulk discount available
Subtotal (1 tape of 25 units)*
Kr.96 675
(exc. VAT)
Kr.120 85
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 3 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 75 | Kr. 3,867 | Kr. 96,68 |
| 100 - 225 | Kr. 3,679 | Kr. 91,98 |
| 250 - 475 | Kr. 3,404 | Kr. 85,10 |
| 500 - 975 | Kr. 3,134 | Kr. 78,35 |
| 1000 + | Kr. 3,02 | Kr. 75,50 |
*price indicative
- RS Stock No.:
- 264-562
- Mfr. Part No.:
- QH8KE5TCR
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | QH8 | |
| Package Type | TSMT-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 202mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Typical Gate Charge Qg @ Vgs | 2.8nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 100V | ||
Series QH8 | ||
Package Type TSMT-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 202mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 1.5W | ||
Typical Gate Charge Qg @ Vgs 2.8nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM 100V 2.0A dual N-channel power MOSFET in a TSMT8 package is designed for high-efficiency switching power supply and motor drive applications.
Low on-resistance
Small Surface Mount Package TSMT8
Pb-free plating and RoHS compliant
Halogen Free
Related links
- ROHM QS8 Dual N/P-Channel-Channel MOSFET 100 V, 8-Pin TSMT8 QS8M51HZGTR
- ROHM N/P-Channel MOSFET 30 V, 8-Pin TSMT8 QH8MA3TCR
- ROHM UT6 Dual N-Channel MOSFET 100 V, 8-Pin HUML2020L8 UT6KE5TCR
- ROHM QH8K51 Dual N-Channel MOSFET 100 V, 8-Pin TSMT-8 QH8K51TR
- ROHM RQ1 P-Channel MOSFET 30 V, 8-Pin TSMT8 RQ1E050RPHZGTR
- ROHM RQ1 P-Channel MOSFET 12 V, 8-Pin TSMT8 RQ1A070ZPHZGTR
- ROHM RQ1 P-Channel MOSFET 30 V, 8-Pin TSMT8 RQ1E070RPHZGTR
- ROHM UT6 Dual N/P-Channel-Channel MOSFET 100 V, 8-Pin HUML2020L8 UT6ME5TCR
