ROHM HT8K 2 Type N-Channel MOSFET, 7 A, 100 V Enhancement, 8-Pin HSMT-8 HT8KE5TB1

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Subtotal (1 tape of 10 units)*

Kr.59 72 

(exc. VAT)

Kr.74 65 

(inc. VAT)

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In Stock
  • Plus 100 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tape*
10 - 90Kr. 5,972Kr. 59,72
100 - 240Kr. 5,674Kr. 56,74
250 - 490Kr. 5,24Kr. 52,40
500 - 990Kr. 4,828Kr. 48,28
1000 +Kr. 4,656Kr. 46,56

*price indicative

Packaging Options:
RS Stock No.:
264-874
Mfr. Part No.:
HT8KE5TB1
Brand:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

100V

Package Type

HSMT-8

Series

HT8K

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

193mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

13W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

2.9nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The ROHM power MOSFET features a dual N-channel configuration with a voltage rating of 100V and a current capacity of 7A. Designed in an HSOP8 package and offers low on-resistance.

Low on-resistance

Small Surface Mount Package (HSOP8)

Pb-free lead plating and RoHS compliant

Halogen Free

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