ROHM HT8K 2 Type N-Channel MOSFET, 13 A, 100 V Enhancement, 8-Pin HSMT-8 HT8KE6TB1

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Subtotal (1 tape of 10 units)*

Kr.93 35 

(exc. VAT)

Kr.116 69 

(inc. VAT)

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  • Plus 100 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tape*
10 - 90Kr. 9,335Kr. 93,35
100 - 240Kr. 8,866Kr. 88,66
250 - 490Kr. 8,214Kr. 82,14
500 - 990Kr. 7,562Kr. 75,62
1000 +Kr. 7,276Kr. 72,76

*price indicative

Packaging Options:
RS Stock No.:
264-876
Mfr. Part No.:
HT8KE6TB1
Brand:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

100V

Package Type

HSMT-8

Series

HT8K

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

57mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

6.7nC

Maximum Power Dissipation Pd

14W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The ROHM power MOSFET features a dual N-channel configuration with a voltage rating of 100V and a current capacity of 13A. Designed in an HSOP8 package and offers low on-resistance.

Low on-resistance

Small Surface Mount Package (HSOP8)

Pb-free lead plating and RoHS compliant

Halogen Free

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