ROHM HT8K 2 N-Channel MOSFET, 7 A, 100 V Enhancement, 8-Pin HSMT-8

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Subtotal 100 units (supplied on a continuous strip)*

Kr. 567,40

(exc. VAT)

Kr. 709,20

(inc. VAT)

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  • 100 unit(s) ready to ship
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Units
Per unit
100 - 240Kr. 5,674
250 - 490Kr. 5,24
500 - 990Kr. 4,828
1000 +Kr. 4,656

*price indicative

Packaging Options:
RS Stock No.:
264-874P
Mfr. Part No.:
HT8KE5TB1
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

100V

Package Type

HSMT-8

Series

HT8K

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

193mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

13W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

2.9nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The ROHM power MOSFET features a dual N-channel configuration with a voltage rating of 100V and a current capacity of 7A. Designed in an HSOP8 package and offers low on-resistance.

Low on-resistance

Small Surface Mount Package (HSOP8)

Pb-free lead plating and RoHS compliant

Halogen Free

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