ROHM Dual (Nch+Pch) HP8K 2 Type N, Type P-Channel MOSFET, 100 V Enhancement, 8-Pin HSOP-8 HP8ME5TB1

Bulk discount available

Subtotal (1 tape of 10 units)*

Kr.82 25 

(exc. VAT)

Kr.102 81 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 100 unit(s) shipping from 26. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tape*
10 - 90Kr. 8,225Kr. 82,25
100 - 240Kr. 7,825Kr. 78,25
250 - 490Kr. 7,23Kr. 72,30
500 - 990Kr. 6,658Kr. 66,58
1000 +Kr. 6,429Kr. 64,29

*price indicative

Packaging Options:
RS Stock No.:
264-877
Mfr. Part No.:
HP8ME5TB1
Brand:
ROHM
Find similar products by selecting one or more attributes.
Select all

Brand

ROHM

Channel Type

Type N, Type P

Product Type

MOSFET

Maximum Drain Source Voltage Vds

100V

Package Type

HSOP-8

Series

HP8K

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

273mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19.7nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual (Nch+Pch)

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The ROHM power MOSFET features a dual N-channel configuration with a voltage rating of 100V and a current capacity of 8.5A. Designed in an HSOP8 package and offers low on-resistance.

Low on-resistance

Small Surface Mount Package (HSOP8)

Pb-free lead plating and RoHS compliant

Halogen Free

Related links