ROHM Dual (Nch+Pch) HP8K 2 Type N, Type P-Channel MOSFET, 8.5 A, 100 V Enhancement, 8-Pin HSOP-8 HP8ME5TB1
- RS Stock No.:
- 264-877
- Mfr. Part No.:
- HP8ME5TB1
- Brand:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (10 units, on tapes of 10)*
Kr. 82,25
(exc. VAT)
Kr. 102,81
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 100 unit(s) shipping from 28 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | Kr. 8,225 | Kr. 82,25 |
| 100 - 240 | Kr. 7,825 | Kr. 78,25 |
| 250 - 490 | Kr. 7,23 | Kr. 72,30 |
| 500 - 990 | Kr. 6,658 | Kr. 66,58 |
| 1000 + | Kr. 6,429 | Kr. 64,29 |
*price indicative
- RS Stock No.:
- 264-877
- Mfr. Part No.:
- HP8ME5TB1
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HP8K | |
| Package Type | HSOP-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 273mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 19.7nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Transistor Configuration | Dual (Nch+Pch) | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HP8K | ||
Package Type HSOP-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 273mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 19.7nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Transistor Configuration Dual (Nch+Pch) | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM power MOSFET features a dual N-channel configuration with a voltage rating of 100V and a current capacity of 8.5A. Designed in an HSOP8 package and offers low on-resistance.
Low on-resistance
Small Surface Mount Package (HSOP8)
Pb-free lead plating and RoHS compliant
Halogen Free
Related links
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