ROHM RJ1 1 N-Channel MOSFET, 170 A, 100 V Enhancement, 3-Pin TO-263AB RJ1P10BBHTL1

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Subtotal 10 units (supplied on a continuous strip)*

Kr. 673,80

(exc. VAT)

Kr. 842,20

(inc. VAT)

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  • 98 unit(s) ready to ship
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Units
Per unit
10 - 99Kr. 67,38
100 - 499Kr. 62,23
500 - 999Kr. 57,66
1000 +Kr. 46,90

*price indicative

Packaging Options:
RS Stock No.:
264-878P
Mfr. Part No.:
RJ1P10BBHTL1
Brand:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

100V

Series

RJ1

Package Type

TO-263AB

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

3.0mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

135nC

Maximum Power Dissipation Pd

189W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Number of Elements per Chip

1

The ROHM Nch 100V 170A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.

Low on-resistance

High power small mold package (TO263AB)

Pb-free plating and RoHS compliant

100% UIS tested

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