ROHM R65 1 N-Channel MOSFET, 125 A, 30 V Enhancement, 8-Pin HSMT-8 RH6E040BGTB1

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Subtotal 100 units (supplied on a continuous strip)*

Kr. 928,90

(exc. VAT)

Kr. 1 161,10

(inc. VAT)

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  • Plus 90 unit(s) shipping from 23 September 2026
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Units
Per unit
100 - 240Kr. 9,289
250 - 490Kr. 8,603
500 - 990Kr. 7,939
1000 +Kr. 7,63

*price indicative

Packaging Options:
RS Stock No.:
265-310P
Mfr. Part No.:
RH6E040BGTB1
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

125A

Maximum Drain Source Voltage Vds

30V

Series

R65

Package Type

HSMT-8

Pin Count

8

Maximum Drain Source Resistance Rds

2.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

30.0nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

78W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Number of Elements per Chip

1

The ROHM Power MOSFET features low on resistance and is housed in a compact, high power small mould package. It is well suited for a variety of applications, including switching, motor drives, and DC/DC converters, delivering efficient performance in space-constrained environments.

Pb free plating

RoHS compliant

High power small mould package

Low on resistance

100 percent Rg and UIS tested

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