DiodesZetex Type N-Channel MOSFET, 710 mA, 60 V Enhancement, 4-Pin SOT-223 ZVN2106GTA
- RS Stock No.:
- 274-992
- Mfr. Part No.:
- ZVN2106GTA
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.47 01
(exc. VAT)
Kr.58 76
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 30 unit(s) shipping from 29. desember 2025
- Plus 9 385 unit(s) shipping from 05. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 9,402 | Kr. 47,01 |
| 25 - 45 | Kr. 5,536 | Kr. 27,68 |
| 50 - 245 | Kr. 4,85 | Kr. 24,25 |
| 250 - 495 | Kr. 4,118 | Kr. 20,59 |
| 500 + | Kr. 3,478 | Kr. 17,39 |
*price indicative
- RS Stock No.:
- 274-992
- Mfr. Part No.:
- ZVN2106GTA
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 710mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.65mm | |
| Length | 6.7mm | |
| Standards/Approvals | No | |
| Width | 3.7 mm | |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 710mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.65mm | ||
Length 6.7mm | ||
Standards/Approvals No | ||
Width 3.7 mm | ||
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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