onsemi NTH Type N-Channel MOSFET, 67 A, 650 V Enhancement, 4-Pin TO-247-4L NTH4L023N065M3S
- RS Stock No.:
- 277-043
- Mfr. Part No.:
- NTH4L023N065M3S
- Brand:
- onsemi
Bulk discount available
Subtotal (1 unit)*
Kr.124 70
(exc. VAT)
Kr.155 88
(inc. VAT)
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- Shipping from 25. mai 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 124,70 |
| 10 - 99 | Kr. 112,34 |
| 100 - 499 | Kr. 103,53 |
| 500 - 999 | Kr. 96,10 |
| 1000 + | Kr. 78,02 |
*price indicative
- RS Stock No.:
- 277-043
- Mfr. Part No.:
- NTH4L023N065M3S
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 67A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247-4L | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 6V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Power Dissipation Pd | 245W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS with exemption 7a, Halide Free, Pb-Free 2LI | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 67A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247-4L | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 6V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Power Dissipation Pd 245W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS with exemption 7a, Halide Free, Pb-Free 2LI | ||
- COO (Country of Origin):
- CN
The ON Semiconductor SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Ultra low gate charge
High speed switching with low capacitance
100% avalanche tested
Device is Halide Free and RoHS compliant
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