onsemi NTM Type N-Channel MOSFET, 131.5 A, 80 V Enhancement, 10-Pin TCPAK10 NTMJST2D6N08HTXG
- RS Stock No.:
- 277-048
- Mfr. Part No.:
- NTMJST2D6N08HTXG
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tape of 5 units)*
Kr.104 68
(exc. VAT)
Kr.130 85
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 3 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | Kr. 20,936 | Kr. 104,68 |
| 50 - 95 | Kr. 19,882 | Kr. 99,41 |
| 100 - 495 | Kr. 18,418 | Kr. 92,09 |
| 500 - 995 | Kr. 16,932 | Kr. 84,66 |
| 1000 + | Kr. 16,314 | Kr. 81,57 |
*price indicative
- RS Stock No.:
- 277-048
- Mfr. Part No.:
- NTMJST2D6N08HTXG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 131.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TCPAK10 | |
| Series | NTM | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 116W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 7.5 mm | |
| Length | 5.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 131.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TCPAK10 | ||
Series NTM | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 116W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 7.5 mm | ||
Length 5.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor MOSFET is a power, single N-channel transistor with an 80V rating, 2.8mΩ on-resistance, and 131.5A current capacity. Its compact TCPAK57 5x7mm package offers excellent thermal performance, making it suitable for high-efficiency power management, motor control, and DC-DC conversion applications.
Optimized top cool package to dissipate heat from top
Small footprint for compact designs
Ultra Low RDS(on) to improve system efficiency
Device is Pb Free and RoHS compliant
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