onsemi NXH Dual Silicon N/P-Channel MOSFET, 800 A, 1200 V, 11-Pin PIM11 NXH800H120L7QDSG

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Subtotal (1 unit)*

Kr.2 461 32 

(exc. VAT)

Kr.3 076 65 

(inc. VAT)

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1 +Kr. 2 461,32

*price indicative

Packaging Options:
RS Stock No.:
277-059
Mfr. Part No.:
NXH800H120L7QDSG
Brand:
onsemi
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Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

800 A

Maximum Drain Source Voltage

1200 V

Series

NXH

Package Type

PIM11

Mounting Type

Through Hole

Pin Count

11

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

2

COO (Country of Origin):
CN
The ON Semiconductor Half Bridge IGBT Power Module features integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes, providing lower conduction and switching losses. This design enables high efficiency and superior reliability. The module is configured as a 1200V, 800A 2-in-1 half-bridge, making it ideal for applications that require robust performance and optimal power conversion efficiency.

NTC thermistor
Isolated base plate
Solderable pins
Low inductive layout
Pb free

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