Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 61 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1

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Kr.202 52 

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Packaging Options:
RS Stock No.:
284-720
Mfr. Part No.:
IMT65R039M1HXUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

51mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

23 V

Maximum Power Dissipation Pd

263W

Typical Gate Charge Qg @ Vgs

41nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon CoolSiC MOSFET 650 V G1 is a pioneering power device that delivers exceptional performance by harnessing the Advanced properties of silicon carbide technology. Designed for high efficiency and reliability, this MOSFET excels in applications demanding outstanding thermal stability and elevated performance under harsh conditions. With an innovative gate oxide structure and superior switching behaviour, it significantly reduces losses at higher currents, ensuring longevity and safety in various electrical environments. Perfectly suited for applications including power supply systems, EV charging infrastructure, and renewable energy solutions, the CoolSiC MOSFET stands as a versatile solution that meets the demanding requirements of modern power electronics. This device is a testament to over 20 years of engineering excellence, serving as a robust foundation for next generation energy solutions.

Optimised switching enhances performance

Robust body diode ensures reliable commutation

Excellent thermal management extends lifetimes

Efficient operation at elevated temperatures

Seamless integration with standard drivers

Kelvin source reduces switching losses

Complies with JEDEC standards for reliability

Versatile for enhanced power density in designs

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