Vishay Single IRLD 1 N-Channel MOSFET, 1 A, 100 V Enhancement, 4-Pin HVMDIP IRLD110PBF
- RS Stock No.:
- 301-338
- Mfr. Part No.:
- IRLD110PBF
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
Kr. 116,69
(exc. VAT)
Kr. 145,86
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 23,338 | Kr. 116,69 |
| 50 - 120 | Kr. 20,318 | Kr. 101,59 |
| 125 - 245 | Kr. 19,334 | Kr. 96,67 |
| 250 - 495 | Kr. 18,166 | Kr. 90,83 |
| 500 + | Kr. 16,84 | Kr. 84,20 |
*price indicative
- RS Stock No.:
- 301-338
- Mfr. Part No.:
- IRLD110PBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HVMDIP | |
| Series | IRLD | |
| Mount Type | Through Hole, Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 540mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | 2.5V | |
| Maximum Gate Source Voltage Vgs | -10V, +10V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.29mm | |
| Length | 5mm | |
| Height | 3.37mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HVMDIP | ||
Series IRLD | ||
Mount Type Through Hole, Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 540mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf 2.5V | ||
Maximum Gate Source Voltage Vgs -10V, +10V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Width 6.29mm | ||
Length 5mm | ||
Height 3.37mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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