Vishay Single IRFD 1 N-Channel MOSFET, 1 A, 100 V Enhancement, 4-Pin HVMDIP IRFD110PBF
- RS Stock No.:
- 919-4498
- Mfr. Part No.:
- IRFD110PBF
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 100 units)*
Kr. 416,30
(exc. VAT)
Kr. 520,40
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 100 - 100 | Kr. 4,163 | Kr. 416,30 |
| 200 - 400 | Kr. 3,914 | Kr. 391,40 |
| 500 + | Kr. 3,538 | Kr. 353,80 |
*price indicative
- RS Stock No.:
- 919-4498
- Mfr. Part No.:
- IRFD110PBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IRFD | |
| Package Type | HVMDIP | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 540mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.5V | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.37mm | |
| Length | 5mm | |
| Width | 6.29mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IRFD | ||
Package Type HVMDIP | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 540mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.5V | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 1.3W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Height 3.37mm | ||
Length 5mm | ||
Width 6.29mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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