N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRLD110PBF

RS Stock No.:: 301-338P
Mfr. Part No.:: IRLD110PBF
Brand:: Vishay

Technical Reference (2)

N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRLD110PBF

View all MOSFETs

3335 In stock for same day dispatch

Price Each (Supplied in a Tube)

Kr. 13,912

(exc. VAT)

Kr. 17,39

(inc. VAT)

Units	Per unit
50 - 120	Kr. 13,912
125 - 245	Kr. 13,252
250 - 495	Kr. 12,446
500 +	Kr. 11,518

RS Stock No.:: 301-338P
Mfr. Part No.:: IRLD110PBF
Brand:: Vishay

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	1 A
Maximum Drain Source Voltage	100 V
Package Type	HVMDIP
Mounting Type	Through Hole
Pin Count	4
Maximum Drain Source Resistance	540 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.3 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-10 V, +10 V
Width	6.29mm
Transistor Material	Si
Typical Gate Charge @ Vgs	6.1 nC @ 5 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Length	5mm
Height	3.37mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRLD110PBF

Technical Reference (2)

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor