STMicroelectronics M1F MOSFET, 30 A, 1200 V, 32-Pin ACEPACK DMT-32 M1F45M12W2-1LA
- RS Stock No.:
- 330-539
- Mfr. Part No.:
- M1F45M12W2-1LA
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
Kr.719 12
(exc. VAT)
Kr.898 90
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 132 unit(s) shipping from 29. desember 2025
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 719,12 |
| 10 + | Kr. 647,16 |
*price indicative
- RS Stock No.:
- 330-539
- Mfr. Part No.:
- M1F45M12W2-1LA
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | ACEPACK DMT-32 | |
| Series | M1F | |
| Mount Type | Surface | |
| Pin Count | 32 | |
| Maximum Drain Source Resistance Rds | 47.5mΩ | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 2.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AQG 324 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type ACEPACK DMT-32 | ||
Series M1F | ||
Mount Type Surface | ||
Pin Count 32 | ||
Maximum Drain Source Resistance Rds 47.5mΩ | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 2.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AQG 324 | ||
Automotive Standard No | ||
RoHS Status: Exempted
- COO (Country of Origin):
- CN
The STMicroelectronics Automotive-grade ACEPACK DMT-32 power module with fourpack topology, featuring 1200 V, 47.5 mΩ typical SiC Power MOSFETs with NTC. Designed for high-efficiency and reliable performance in automotive applications.
AQG 324 qualified
1200 V blocking voltage
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