STMicroelectronics Sixpack Topology M2P45M12W2 6 Type N-Channel MOSFET Arrays, 30 A, 1200 V Enhancement, 32-Pin ACEPACK

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Kr.676 79 

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Kr.845 99 

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RS Stock No.:
640-673
Mfr. Part No.:
M2P45M12W2-1LA
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET Arrays

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1200V

Package Type

ACEPACK DMT-32

Series

M2P45M12W2

Mount Type

Through Hole

Pin Count

32

Maximum Drain Source Resistance Rds

60.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

100nC

Forward Voltage Vf

2.5V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

22 V

Maximum Operating Temperature

175°C

Transistor Configuration

Sixpack Topology

Width

27.90 mm

Length

44.50mm

Standards/Approvals

AQG 324, Automotive‐grade

Height

5.90mm

Number of Elements per Chip

6

Automotive Standard

AQG 324

COO (Country of Origin):
CN
The STMicroelectronics automotive-grade power module housed in the ACEPACK DMT-32 package. It implements a sixpack topology using second-generation silicon carbide (SiC) MOSFETs, optimized for the DC/DC converter stage in on-board chargers (OBCs) for hybrid and electric vehicles. Designed for high-efficiency and high-frequency switching, it integrates an NTC thermistor for temperature monitoring and features an aluminum nitride (AlN) insulated substrate for superior thermal performance.

1200 V blocking voltage for high-voltage applications

Typical RDS(on) of 47.5 mΩ for reduced conduction losses

Maximum junction temperature of 175 °C for thermal robustness

DBC Cu-AlN-Cu substrate for efficient heat dissipation

3 kV isolation voltage for enhanced safety

Integrated NTC sensor for real-time thermal feedback

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