Microchip TP0610T Type P-Channel MOSFET, 60 V Enhancement, 3-Pin SOT-23 TP0610T-G
- RS Stock No.:
- 333-219
- Mfr. Part No.:
- TP0610T-G
- Brand:
- Microchip
Subtotal (1 reel of 3000 units)*
Kr. 20 667,00
(exc. VAT)
Kr. 25 833,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
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- Shipping from 20 November 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | Kr. 6,889 | Kr. 20 667,00 |
*price indicative
- RS Stock No.:
- 333-219
- Mfr. Part No.:
- TP0610T-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | TP0610T | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series TP0610T | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip MOSFET is a low threshold, enhancement mode transistor utilizes a vertical DMOS structure and well proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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