Infineon ISS Type P-Channel MOSFET, 0.18 A, 60 V Enhancement, 3-Pin SOT-23 ISS55EP06LMXTSA1

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Subtotal (1 pack of 15 units)*

Kr.12 135 

(exc. VAT)

Kr.15 165 

(inc. VAT)

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Last RS stock
  • Final 8 340 unit(s), ready to ship
Units
Per unit
Per Pack*
15 - 135Kr. 0,809Kr. 12,14
150 - 360Kr. 0,77Kr. 11,55
375 - 735Kr. 0,488Kr. 7,32
750 - 1485Kr. 0,412Kr. 6,18
1500 +Kr. 0,366Kr. 5,49

*price indicative

Packaging Options:
RS Stock No.:
244-2278
Mfr. Part No.:
ISS55EP06LMXTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

0.18A

Maximum Drain Source Voltage Vds

60V

Series

ISS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon P-Channel Power MOSFET has a design flexibility and ease of handling to meet the highest performance requirements which include the -12V range of products that are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switched, DC-DC converters, and low voltage drive applications.

P-Channel

Low On-resistance RDS(on)

100% Avalanche tested

Logic level or normal level

Enhancement mode

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-21

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