Infineon ISS Type P-Channel MOSFET, 0.18 A, 60 V Enhancement, 3-Pin SOT-23

Bulk discount available

Subtotal (1 reel of 3000 units)*

Kr.1 485 00 

(exc. VAT)

Kr.1 857 00 

(inc. VAT)

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Last RS stock
  • Final 6 000 unit(s), ready to ship
Units
Per unit
Per Reel*
3000 - 3000Kr. 0,495Kr. 1 485,00
6000 - 12000Kr. 0,47Kr. 1 410,00
15000 +Kr. 0,45Kr. 1 350,00

*price indicative

RS Stock No.:
244-2277
Mfr. Part No.:
ISS55EP06LMXTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.18A

Maximum Drain Source Voltage Vds

60V

Series

ISS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Distrelec Product Id

304-40-557

Automotive Standard

AEC-Q101

The Infineon P-Channel Power MOSFET has a design flexibility and ease of handling to meet the highest performance requirements which include the -12V range of products that are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switched, DC-DC converters, and low voltage drive applications.

P-Channel

Low On-resistance RDS(on)

100% Avalanche tested

Logic level or normal level

Enhancement mode

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-21

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