Infineon ISS Type P-Channel MOSFET, 3 A, 60 V Enhancement, 3-Pin SOT-23 ISS17EP06LMXTSA1

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Subtotal (1 pack of 10 units)*

Kr. 9,84

(exc. VAT)

Kr. 12,30

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90Kr. 0,984Kr. 9,84
100 - 240Kr. 0,618Kr. 6,18
250 - 490Kr. 0,595Kr. 5,95
500 - 990Kr. 0,538Kr. 5,38
1000 +Kr. 0,503Kr. 5,03

*price indicative

Packaging Options:
RS Stock No.:
244-2275
Mfr. Part No.:
ISS17EP06LMXTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

60V

Series

ISS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon P-Channel Power MOSFET offer design flexibility and ease of handling to meet the highest performance requirements which include the -12V range of products that are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switched, DC-DC converters, and low voltage drive applications.

P-Channel

Low On-resistance RDS(on)

100% Avalanche tested

Logic level or normal level

Enhancement mode

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-21

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