Infineon OptiMOS P Type P-Channel MOSFET, 1.18 A, 20 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 827-0134
Mfr. Part No.:: BSS215PH6327XTSA1
Brand:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 1.18 A, 20 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 250 units)*

Kr. 430,50

(exc. VAT)

Kr. 538,00

(inc. VAT)

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Units	Per unit	Per Reel*
250 - 250	Kr. 1,722	Kr. 430,50
500 - 1000	Kr. 1,291	Kr. 322,75
1250 - 2250	Kr. 1,205	Kr. 301,25
2500 - 6000	Kr. 1,119	Kr. 279,75
6250 +	Kr. 1,033	Kr. 258,25

*price indicative

RS Stock No.:: 827-0134
Mfr. Part No.:: BSS215PH6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.18A
	Maximum Drain Source Voltage Vds	20V
	Series	OptiMOS P
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	280mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	-12V, +12V
	Typical Gate Charge Qg @ Vgs	3.6nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	500mW
	Forward Voltage Vf	-1.1V
	Maximum Operating Temperature	150°C
	Width	1.3mm
	Standards/Approvals	No
	Height	1mm
	Length	2.9mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.18A
	Maximum Drain Source Voltage Vds 20V
	Series OptiMOS P
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 280mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs -12V, +12V
	Typical Gate Charge Qg @ Vgs 3.6nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 500mW
	Forward Voltage Vf -1.1V
	Maximum Operating Temperature 150°C
	Width 1.3mm
	Standards/Approvals No
	Height 1mm
	Length 2.9mm
	Automotive Standard AEC-Q101

Infineon OptiMOS P Series MOSFET, 20V Maximum Drain Source Voltage, 280mΩ Maximum Drain Source Resistance - BSS215PH6327XTSA1

This MOSFET is a P-channel enhancement transistor intended for surface-mount applications in demanding electronic systems. It provides controlled switching functionality for low-voltage circuits, operating across a wide ambient range to suit automotive and industrial conditions, and is housed in a compact SOT-23 package for space-constrained designs.

Features and Benefits:

• Low on-resistance of 280mΩ reduces conduction losses and heatsinking needs
• Maximum drain current 1.18A supports moderate load switching capability
• Drain-source voltage rating of 20V enables safe operation in 12V systems
• Typical gate charge 3.6nC allows faster switching with lower drive energy
• Power dissipation 500mW limits thermal stress in low-power designs
• Rated gate-source tolerance 12V ensures resilience to gate overdrive

Applications

• Suitable for high-side switching in battery management systems
• Ideal for load disconnect in automotive auxiliary circuits
• Used for DC-DC converter control in compact power supplies
• Can be used for reverse polarity protection in 12V installations
• Appropriate for signal-level switching in sensor interface modules

What temperature range can it tolerate during operation?

It is specified to function from -55°C up to 150°C, accommodating extreme thermal environments.

How is the device packaged for assembly on PCBs?

It is supplied in a SOT-23 surface-mount package designed for automated PCB placement and soldering.

What gate drive considerations should I account for?

The device accepts up to 12V between gate and source

ensure gate-drive circuitry limits excursions within this threshold.

Is the device suitable for automotive qualification?

It meets AEC‑Q101 standards appropriate for many automotive electronic designs.