Infineon OptiMOS P Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 3-Pin SOT-23 BSS314PEH6327XTSA1
- RS Stock No.:
- 892-2377
- Mfr. Part No.:
- BSS314PEH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 100 units)*
Kr.209 80
(exc. VAT)
Kr.262 20
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 10 200 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | Kr. 2,098 | Kr. 209,80 |
| 500 - 900 | Kr. 1,993 | Kr. 199,30 |
| 1000 - 2400 | Kr. 1,909 | Kr. 190,90 |
| 2500 - 4900 | Kr. 1,826 | Kr. 182,60 |
| 5000 + | Kr. 1,154 | Kr. 115,40 |
*price indicative
- RS Stock No.:
- 892-2377
- Mfr. Part No.:
- BSS314PEH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 230mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.1V | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.3mm | |
| Width | 0.1 mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 230mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.1V | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.3mm | ||
Width 0.1 mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS P P-Channel MOSFET 30 V, 3-Pin SOT-23 BSS314PEH6327XTSA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 3-Pin SOT-23 BSS308PEH6327XTSA1
- Infineon OptiMOS P P-Channel MOSFET 20 V, 3-Pin SOT-23 BSS215PH6327XTSA1
- Infineon OptiMOS P P-Channel MOSFET 20 V, 3-Pin SOT-323 BSS223PWH6327XTSA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 3-Pin DPAK IPD90P03P4L04ATMA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 3-Pin DPAK IPD042P03L3GATMA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 3-Pin D2PAK IPB45P03P4L11ATMA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 3-Pin TO-220 IPP80P03P4L04AKSA1