Infineon CoolSiC Type N-Channel MOSFET, 64 A, 750 V Enhancement, 22-Pin PG-HDSOP-22 AIMDQ75R027M1HXUMA1

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Kr.197 25 

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Kr.246 56 

(inc. VAT)

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10 - 99Kr. 177,55
100 +Kr. 163,82

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RS Stock No.:
348-931
Mfr. Part No.:
AIMDQ75R027M1HXUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

750V

Package Type

PG-HDSOP-22

Series

CoolSiC

Mount Type

Surface

Pin Count

22

Maximum Drain Source Resistance Rds

36mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

23 V

Typical Gate Charge Qg @ Vgs

49nC

Maximum Power Dissipation Pd

273W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
The Infineon 750 V CoolSiC MOSFET is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgapSiC material characteristics, the 750V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

Infineon proprietary die attach technology

Driver source pin available

Enhanced robustness and reliability for bus voltages beyond 500 V

Superior efficiency in hard switching

Higher switching frequency in soft switching topologies

Robustness against parasitic turn on for unipolar gate driving

Best in class thermal dissipation

Reduced switching losses through improved gate control

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