Infineon IPA Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPAN60R180CM8XKSA1
- RS Stock No.:
- 348-987
- Mfr. Part No.:
- IPAN60R180CM8XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.109 47
(exc. VAT)
Kr.136 84
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 495 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 21,894 | Kr. 109,47 |
| 50 - 95 | Kr. 20,776 | Kr. 103,88 |
| 100 - 495 | Kr. 19,264 | Kr. 96,32 |
| 500 - 995 | Kr. 17,732 | Kr. 88,66 |
| 1000 + | Kr. 17,092 | Kr. 85,46 |
*price indicative
- RS Stock No.:
- 348-987
- Mfr. Part No.:
- IPAN60R180CM8XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-TO220-3 | |
| Series | IPA | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 25W | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-TO220-3 | ||
Series IPA | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 25W | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode (CFD) for all products with outstanding robustness against hard commutation and excellent ESD capability.
Significant reduction of switching and conduction losses
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
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