Infineon CoolMOS CM8 Type N-Channel Power MOSFET, 135 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60R016CM8XTMA1
- RS Stock No.:
- 348-994
- Mfr. Part No.:
- IPDQ60R016CM8XTMA1
- Brand:
- Infineon
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Subtotal (1 unit)*
Kr.170 50
(exc. VAT)
Kr.213 12
(inc. VAT)
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In Stock
- Plus 598 unit(s) shipping from 29. desember 2025
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 170,50 |
| 10 - 99 | Kr. 153,41 |
| 100 + | Kr. 141,51 |
*price indicative
- RS Stock No.:
- 348-994
- Mfr. Part No.:
- IPDQ60R016CM8XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 135A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS CM8 | |
| Package Type | PG-HDSOP-22 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 171nC | |
| Maximum Power Dissipation Pd | 625W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDECforIndustrialApplications, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 135A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS CM8 | ||
Package Type PG-HDSOP-22 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 171nC | ||
Maximum Power Dissipation Pd 625W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDECforIndustrialApplications, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.
Suitable for hard and soft switching topologies
Ease of use and fast design in through low ringing tendency
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
Increased power density solutions enabled by using products with smaller footprint
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