Infineon OptiMOS-TM5 N-Channel MOSFET, 350 A, 80 V Enhancement, 4-Pin PG-HSOG-4-1 IAUMN08S5N013GAUMA1
- RS Stock No.:
- 349-023
- Mfr. Part No.:
- IAUMN08S5N013GAUMA1
- Brand:
- Infineon
Add 20 more to save Kr. 139,50
View bulk pricing optionsSubtotal (1 pack of 2 units)*
Kr. 140,71
(exc. VAT)
Kr. 175,89
(inc. VAT)
FREE delivery for online orders over 750,00 kr
- 2 000 unit(s) shipping from 10 December 2026
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 2 - 18 | Kr. 70,355 | Kr. 140,71 | - |
| 20 - 198 | Kr. 63,38 | Kr. 126,76 | Kr. 139,50 |
| 200 - 998 | Kr. 58,40 | Kr. 116,80 | Kr. 2 391,00 |
| 1000 - 1998 | Kr. 54,17 | Kr. 108,34 | Kr. 16 185,00 |
| 2000 + | Kr. 48,675 | Kr. 97,35 | Kr. 43 360,00 |
*price indicative
- RS Stock No.:
- 349-023
- Mfr. Part No.:
- IAUMN08S5N013GAUMA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 350A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PG-HSOG-4-1 | |
| Series | OptiMOS-TM5 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 138nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 307W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 350A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PG-HSOG-4-1 | ||
Series OptiMOS-TM5 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 138nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 307W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Infineon IAU Series MOSFET, 350A Maximum Continuous Drain Current, 80V Maximum Drain Source Voltage - IAUMN08S5N013GAUMA1
Features & Benefits
Applications
What specifications should I be aware of before installation?
How can this module enhance data management in automation projects?
What kind of environmental conditions can it withstand?
Related links
- Infineon OptiMOS-TM5 N-Channel MOSFET 100 V Enhancement, 4-Pin PG-HSOG-4-1 IAUMN10S5N016GAUMA1
- Infineon IAU N-Channel MOSFET 100 V Enhancement, 4-Pin PG-HSOG-4-1 IAUMN08S5N012GAUMA1
- Infineon OptiMOS-TM5 N-Channel MOSFET 60 V Enhancement, 8-Pin PG-TDSON-8 FL ISC025N08NM5LF2ATMA1
- Infineon OptiMOS-TM5 N-Channel MOSFET 100 V Enhancement, 8-Pin TDSON BSC098N10NS5ATMA1
- Infineon OptiMOS-TM5 N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON BSC072N08NS5ATMA1
- Infineon OptiMOS-TM5 N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON BSC037N08NS5ATMA1
- Infineon OptiMOS-TM5 Dual N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TDSON-8-61 IAUCN10S5L280DATMA1
- Infineon OptiMOS-TM5 Dual N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TDSON-8-60 IAUCN10S5L094DATMA1
