Infineon CoolSiC Type N-Channel MOSFET, 34 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R075M1HXKSA1
- RS Stock No.:
- 349-113
- Mfr. Part No.:
- IMYH200R075M1HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
Kr.383 31
(exc. VAT)
Kr.479 14
(inc. VAT)
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In Stock
- 240 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 383,31 |
| 10 - 99 | Kr. 345,03 |
| 100 + | Kr. 318,15 |
*price indicative
- RS Stock No.:
- 349-113
- Mfr. Part No.:
- IMYH200R075M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 2000V | |
| Series | CoolSiC | |
| Package Type | PG-TO-247-4-PLUS-NT14 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 106mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 267W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 2000V | ||
Series CoolSiC | ||
Package Type PG-TO-247-4-PLUS-NT14 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 106mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 267W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET is a high performance silicon carbide MOSFET featuring .XT interconnection technology for enhanced thermal and electrical performance. With a benchmark gate threshold voltage (VGS(th)) of 4.5 V, it offers reliable and efficient switching, making it ideal for high voltage power applications. This MOSFET delivers superior performance, ensuring excellent efficiency and robust operation even in demanding environments.
Very low switching losses
Robust body diode for hard commutation
RoHS compliant
Halogen free
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