Infineon IPT Type N-Channel Power Transistor, 137 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT067N20NM6ATMA1

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Kr.102 63 

(exc. VAT)

Kr.128 29 

(inc. VAT)

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10 - 99Kr. 92,44
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RS Stock No.:
349-130
Mfr. Part No.:
IPT067N20NM6ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

137A

Maximum Drain Source Voltage Vds

200V

Series

IPT

Package Type

PG-HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

300W

Typical Gate Charge Qg @ Vgs

71nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

J-STD-020, IEC61249-2-21, 100% Avalanche Tested, RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), minimizing conduction losses. The excellent gate charge x RDS(on) product (FOM) ensures superior switching performance, while the very low reverse recovery charge (Qrr) contributes to efficient operation. With a high avalanche energy rating, it offers enhanced robustness, and it is capable of operating at 175°C, making it reliable even in harsh environments.

Pb free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

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