Infineon IPT Type N-Channel MOSFET, 8 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T065S7XTMA1
- RS Stock No.:
- 349-262
- Mfr. Part No.:
- IPT60T065S7XTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.128 91
(exc. VAT)
Kr.161 138
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 2 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 64,455 | Kr. 128,91 |
| 20 - 198 | Kr. 58,06 | Kr. 116,12 |
| 200 - 998 | Kr. 53,48 | Kr. 106,96 |
| 1000 - 1998 | Kr. 49,59 | Kr. 99,18 |
| 2000 + | Kr. 44,56 | Kr. 89,12 |
*price indicative
- RS Stock No.:
- 349-262
- Mfr. Part No.:
- IPT60T065S7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Power Dissipation Pd | 167W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Power Dissipation Pd 167W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS S7 boasts the lowest Rdson values for an HV SJ MOSFET, with a distinctive increase in energy efficiency. The embedded Temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7 is optimized for static switching and high current applications. It is an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS and inverter topologies. The new temperature sensor enhances S7 features, allowing the best possible utilization of the power transistor.
CoolMOS S7 technology enables lowest RDS(on) in the smallest footprint
Optimized price performance in low frequency switching applications
High pulse current capability
Seamless diagnostics at the lowest system
Temperature sense feature for protection and optimized thermal device utilization
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