Infineon IPT Type N-Channel MOSFET, 313 A, 60 V Enhancement, 8-Pin PG-HSOF-8
- RS Stock No.:
- 273-5352
- Mfr. Part No.:
- IPT012N06NATMA1
- Brand:
- Infineon
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Subtotal (1 unit)*
Kr.65 99
(exc. VAT)
Kr.82 49
(inc. VAT)
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In Stock
- 90 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 49 | Kr. 65,99 |
| 50 - 99 | Kr. 54,91 |
| 100 - 249 | Kr. 50,68 |
| 250 - 999 | Kr. 47,13 |
| 1000 + | Kr. 46,10 |
*price indicative
- RS Stock No.:
- 273-5352
- Mfr. Part No.:
- IPT012N06NATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 313A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 214W | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC1, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 313A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 214W | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC1, RoHS | ||
Automotive Standard No | ||
The Infineon Power MOSFET is optimized for high current applications such as forklift, light electric vehicles, POL and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. It is qualified according to JEDEC1 for target applications.
Halogen free
RoHS compliant
Pb free lead plating
Superior thermal resistance
100 percent avalanche tested
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