Infineon IPT Type N-Channel MOSFET, 169 A, 80 V Enhancement, 8-Pin PG-HSOF-8 IPT029N08N5ATMA1

Subtotal (1 reel of 2000 units)*

Kr.40 732 00 

(exc. VAT)

Kr.50 916 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +Kr. 20,366Kr. 40 732,00

*price indicative

RS Stock No.:
273-2793
Mfr. Part No.:
IPT029N08N5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

169A

Maximum Drain Source Voltage Vds

80V

Series

IPT

Package Type

PG-HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.9mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

7nC

Maximum Power Dissipation Pd

167W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, JEDEC1, IEC61249-2-21

Automotive Standard

No

The Infineon MOSFET is a N channel 80 V MOSFET and ideal for high frequency switching and synchronized rectification. It is qualified according to JEDEC for target applications. This MOSFET is fully qualified according to JEDEC for industrial applications and halogen free according to IEC61249 2 21.

RoHS compliant

Pb free lead plating

Excellent gate charge

Very low on resistance

100 percent avalanche tested

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