Infineon IPT Type N-Channel Power Transistor, 212 A, 135 V Enhancement, 8-Pin PG-HSOG-8 IPTG029N13NM6ATMA1
- RS Stock No.:
- 349-137
- Mfr. Part No.:
- IPTG029N13NM6ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
Kr.84 25
(exc. VAT)
Kr.105 31
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 800 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 84,25 |
| 10 - 99 | Kr. 75,73 |
| 100 - 499 | Kr. 70,01 |
| 500 - 999 | Kr. 64,98 |
| 1000 + | Kr. 58,12 |
*price indicative
- RS Stock No.:
- 349-137
- Mfr. Part No.:
- IPTG029N13NM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Series | IPT | |
| Package Type | PG-HSOG-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 104nC | |
| Maximum Power Dissipation Pd | 294W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD-020, RoHS, IEC61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 135V | ||
Series IPT | ||
Package Type PG-HSOG-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 104nC | ||
Maximum Power Dissipation Pd 294W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD-020, RoHS, IEC61249-2-21 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 135 V is an N-channel, normal level MOSFET designed to deliver high efficiency performance in power applications. It features very low on-resistance (RDS(on)), which minimizes conduction losses for greater energy efficiency. With an excellent gate charge x RDS(on) product (FOM), it ensures optimal switching performance. The MOSFET also offers very low reverse recovery charge (Qrr), improving switching efficiency. Additionally, it is 100% avalanche tested for reliability and can operate at 175°C, making it suitable for high temperature and demanding environments.
Optimized for motor drives and battery powered applications
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
Related links
- Infineon IPT N-Channel MOSFET 135 V, 8-Pin PG-HSOF-8 IPT020N13NM6ATMA1
- Infineon IPT N-Channel MOSFET 135 V, 8-Pin PG-HSOF-8 IPTG020N13NM6ATMA1
- Infineon IPT N-Channel MOSFET 135 V, 16-Pin PG-HSOF-16 IPTC020N13NM6ATMA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60R037CM8XTMA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60R180CM8XTMA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60T065S7XTMA1
- Infineon IPT N-Channel MOSFET 120 V, 8-Pin PG-HSOF-8 IPTG017N12NM6ATMA1
- Infineon IPT N-Channel MOSFET 200 V, 8-Pin PG-HSOF-8 IPT129N20NM6ATMA1