Infineon IMZC120 N-Channel MOSFET, 49 A, 1.2 kV Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R026M2HXKSA1
- RS Stock No.:
- 351-927
- Mfr. Part No.:
- IMZC120R026M2HXKSA1
- Brand:
- Infineon
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- RS Stock No.:
- 351-927
- Mfr. Part No.:
- IMZC120R026M2HXKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | PG-TO-247-4-U07 | |
| Series | IMZC120 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 69mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | 5.5V | |
| Maximum Power Dissipation Pd | 289W | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Width | 16mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 23.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type PG-TO-247-4-U07 | ||
Series IMZC120 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 69mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf 5.5V | ||
Maximum Power Dissipation Pd 289W | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Width 16mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 23.5mm | ||
Automotive Standard No | ||
Infineon IMZC120 Series MOSFET, 1200V Drain Source Voltage, 49A Continuous Drain Current - IMZC120R026M2HXKSA1
Features and Benefits:
• 49A continuous drain current enabling substantial load handling
• 69mΩ Rds(on) for reduced conduction losses at operating currents
• 289W maximum power dissipation for high thermal stress tolerance
• 60nC typical gate charge for predictable switching control
• 25V gate-source limit supporting common gate-drive voltages
Applications
• Ideal for high-voltage power supplies and converters
• Used for traction and renewable-energy power electronics
• Can be used for hard-switching and chopper topologies
• Used with through-hole heatsinking arrangements for thermal management
What package type does it use and how does that affect mounting?
How does its thermal range influence placement in systems?
What gate-drive considerations are necessary for switching performance?
How should designers account for power dissipation in thermal design?
Related links
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- Infineon IMZC120 N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R022M2HXKSA1
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