Infineon IMBG65 Type N-Channel MOSFET, 34.9 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R060M2H

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Subtotal (1 pack of 2 units)*

Kr.162 37 

(exc. VAT)

Kr.202 962 

(inc. VAT)

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2 - 18Kr. 81,185Kr. 162,37
20 - 198Kr. 73,045Kr. 146,09
200 +Kr. 67,38Kr. 134,76

*price indicative

RS Stock No.:
351-959
Mfr. Part No.:
IMBG65R060M2H
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

34.9A

Maximum Drain Source Voltage Vds

650V

Output Power

148W

Package Type

PG-TO263-7

Series

IMBG65

Mount Type

Surface

Pin Count

7

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

4.5mm

Length

10.2mm

Standards/Approvals

JEDEC

Width

9.45 mm

Automotive Standard

No

The Infineon CoolSiC MOSFET G2 in a D2PAK-7 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Enables BOM savings

Highest reliability

Enables top efficiency and power density

Ease of use

Full compatibility with existing vendors

Allows designs without fan or heatsink

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