Infineon AIMZA75 N-Channel MOSFET, 163 A, 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R008M1HXKSA1
- RS Stock No.:
- 351-988
- Mfr. Part No.:
- AIMZA75R008M1HXKSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 470,07
(exc. VAT)
Kr. 587,59
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 470,07 |
| 10 - 99 | Kr. 423,05 |
| 100 + | Kr. 390,33 |
*price indicative
- RS Stock No.:
- 351-988
- Mfr. Part No.:
- AIMZA75R008M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 163A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | PG-TO247-4 | |
| Series | AIMZA75 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 14.0mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Power Dissipation Pd | 517W | |
| Forward Voltage Vf | 5.3V | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Width | 15.9mm | |
| Standards/Approvals | AEC Q101 | |
| Length | 21.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 163A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type PG-TO247-4 | ||
Series AIMZA75 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 14.0mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Power Dissipation Pd 517W | ||
Forward Voltage Vf 5.3V | ||
Maximum Gate Source Voltage Vgs 23V | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Width 15.9mm | ||
Standards/Approvals AEC Q101 | ||
Length 21.1mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC Automotive MOSFET is built over the solid silicon carbide technology. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
Superior efficiency in hard switching
Enables higher switching frequency
Higher reliability
Robustness against parasitic turn
Unipolar driving
Related links
- Infineon IMZA75 N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R008M1HXKSA1
- Infineon CoolSiC N-Channel Power MOSFET 1400 V Enhancement, 4-Pin PG-TO247-4 IMYR140R008M2HXLSA1
- Infineon CoolSiC N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R020M1HXKSA1
- Infineon CoolSiC N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R060M1HXKSA1
- Infineon CoolSiC N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R060M1HXKSA1
- Infineon CoolSiC N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R040M1HXKSA1
- Infineon CoolSiC N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R020M2HXKSA1
- Infineon CoolSiC N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R040M2HXKSA1
