Infineon CoolSiC N channel-Channel Power MOSFET, 207 A, 1400 V Enhancement, 4-Pin PG-TO247-4 IMYR140R008M2HXLSA1

Bulk discount available

Subtotal (1 unit)*

Kr. 504,83

(exc. VAT)

Kr. 631,04

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 240 unit(s) shipping from 13 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9Kr. 504,83
10 - 24Kr. 454,38
25 +Kr. 373,57

*price indicative

RS Stock No.:
762-946
Mfr. Part No.:
IMYR140R008M2HXLSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

207A

Maximum Drain Source Voltage Vds

1400V

Series

CoolSiC

Package Type

PG-TO247-4

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

203nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

710W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

23.8mm

Height

4.9mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon CoolSiC 1400 V G2 SiC MOSFET features a 1400 V rating and a current capability of 147 A at 100°C, with a low on-resistance of 8.5 mΩ. It supports high thermal performance and can withstand short circuits for 2 μs. The device is designed with robust parasitic turn-on protection and a high creepage distance.

Very low switching losses

Robust body diode for hard commutation

Wide power pins for high current capability

Resistive weldable pins for direct busbar connections

Related links