STMicroelectronics N-Channel STO60 Type N-Channel MOSFET, 79 A, 600 V, 8-Pin TO-LL STO60N030M9
- RS Stock No.:
- 358-978
- Mfr. Part No.:
- STO60N030M9
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
Kr.141 03
(exc. VAT)
Kr.176 29
(inc. VAT)
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- Shipping from 27. april 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 141,03 |
| 10 - 99 | Kr. 126,98 |
| 100 + | Kr. 117,08 |
*price indicative
- RS Stock No.:
- 358-978
- Mfr. Part No.:
- STO60N030M9
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Operating Frequency | 1 MHz | |
| Maximum Continuous Drain Current Id | 79A | |
| Output Power | 255W | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-LL | |
| Series | STO60 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | N-Channel | |
| Width | 11.88 mm | |
| Height | 2.4mm | |
| Standards/Approvals | RoHS | |
| Length | 10mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Operating Frequency 1 MHz | ||
Maximum Continuous Drain Current Id 79A | ||
Output Power 255W | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-LL | ||
Series STO60 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration N-Channel | ||
Width 11.88 mm | ||
Height 2.4mm | ||
Standards/Approvals RoHS | ||
Length 10mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Very low FOM
Higher VDSS rating
Higher dv by dt capability
Easy to drive
100 percent avalanche tested
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