STMicroelectronics STP50N60DM6 Type N-Channel MOSFET, 36 A, 600 V Enhancement, 8-Pin TO-LL
- RS Stock No.:
- 206-6072
- Mfr. Part No.:
- STP50N60DM6
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr.2 146 95
(exc. VAT)
Kr.2 683 70
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 27. april 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 42,939 | Kr. 2 146,95 |
| 100 - 200 | Kr. 41,779 | Kr. 2 088,95 |
| 250 - 450 | Kr. 40,662 | Kr. 2 033,10 |
| 500 - 950 | Kr. 39,633 | Kr. 1 981,65 |
| 1000 + | Kr. 38,644 | Kr. 1 932,20 |
*price indicative
- RS Stock No.:
- 206-6072
- Mfr. Part No.:
- STP50N60DM6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STP50N60DM6 | |
| Package Type | TO-LL | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 28.9mm | |
| Width | 10 mm | |
| Height | 4.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STP50N60DM6 | ||
Package Type TO-LL | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 28.9mm | ||
Width 10 mm | ||
Height 4.4mm | ||
Automotive Standard No | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
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