STMicroelectronics N-Channel STL Type N-Channel MOSFET, 167 A, 40 V Enhancement, 8-Pin PowerFLAT
- RS Stock No.:
- 366-223
- Mfr. Part No.:
- STL170N4LF8
- Brand:
- STMicroelectronics
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Kr.15 79
(exc. VAT)
Kr.19 74
(inc. VAT)
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- Plus 3 000 unit(s) shipping from 19. januar 2026
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 15,79 |
| 10 - 99 | Kr. 14,30 |
| 100 - 499 | Kr. 13,16 |
| 500 - 999 | Kr. 12,24 |
| 1000 + | Kr. 10,87 |
*price indicative
- RS Stock No.:
- 366-223
- Mfr. Part No.:
- STL170N4LF8
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Operating Frequency | 1 MHz | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 167A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Output Power | 111W | |
| Package Type | PowerFLAT | |
| Series | STL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | N-Channel | |
| Length | 5.1mm | |
| Width | 5.9 mm | |
| Standards/Approvals | JEDEC (JESD51-5,-7) | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Operating Frequency 1 MHz | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 167A | ||
Maximum Drain Source Voltage Vds 40V | ||
Output Power 111W | ||
Package Type PowerFLAT | ||
Series STL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration N-Channel | ||
Length 5.1mm | ||
Width 5.9 mm | ||
Standards/Approvals JEDEC (JESD51-5,-7) | ||
Height 1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics 40 V N channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state of the ART of figure of merit for very low on state resistance while reducing internal capacitances and gate charge for Faster and more efficient switching.
MSL1 grade
175 °C maximum operating junction temperature
100 percent avalanche tested
Low gate charge Qg
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