Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 118 A, 1.2 kV Enhancement, 4-Pin Tape & Reel

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Subtotal (1 unit)*

Kr. 232,72

(exc. VAT)

Kr. 290,90

(inc. VAT)

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  • Plus 11 unit(s) shipping from 12 October 2026
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1 - 9Kr. 232,72
10 - 99Kr. 209,35
100 +Kr. 193,11

*price indicative

RS Stock No.:
427-760
Mfr. Part No.:
DM170S12TDRB
Brand:
Starpower
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Brand

Starpower

Channel Type

Single Switch

Product Type

SiC Mosfet without Diode

Maximum Continuous Drain Current Id

118A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

Tape & Reel

Series

DOSEMI

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

29.0mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

19V

Forward Voltage Vf

3.6V

Maximum Power Dissipation Pd

355W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
CN
The Starpower MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.

SiC power MOSFET

Low RDS(on)

Chip sintering technology

Low inductance case avoid oscillations

ROHS

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