Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 64 A, 1.2 kV Enhancement, 4-Pin Tape & Reel

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Subtotal (1 unit)*

Kr. 129,50

(exc. VAT)

Kr. 161,88

(inc. VAT)

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Units
Per unit
1 - 9Kr. 129,50
10 - 99Kr. 116,57
100 - 499Kr. 107,42
500 - 999Kr. 99,64
1000 +Kr. 81,11

*price indicative

RS Stock No.:
427-757
Mfr. Part No.:
DM400S12TDRB
Brand:
Starpower
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Brand

Starpower

Product Type

SiC Mosfet without Diode

Channel Type

Single Switch

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

Tape & Reel

Series

DOSEMI

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

55.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

268W

Typical Gate Charge Qg @ Vgs

86.6nC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

3.85V

Maximum Gate Source Voltage Vgs

22V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Starpower MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.

SiC power MOSFET

Low RDS(on)

Low inductance case avoid oscillations

ROHS

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