Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 64 A, 1.2 kV Enhancement, 4-Pin Tape & Reel

View all MOSFETs
Get a bulk buy discount

Add 10 more to save Kr. 129,30

View bulk pricing options

Subtotal (1 unit)*

Kr. 129,50

(exc. VAT)

Kr. 161,88

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 20 unit(s) shipping from 09 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Saving
1 - 9Kr. 129,50-
10 - 99Kr. 116,57Kr. 129,30
100 - 499Kr. 107,42Kr. 2 208,00
500 - 999Kr. 99,64Kr. 14 930,00
1000 +Kr. 81,11Kr. 48 390,00

*price indicative

RS Stock No.:
427-757
Mfr. Part No.:
DM400S12TDRB
Brand:
Starpower
Find similar products by selecting one or more attributes.
Select all

Brand

Starpower

Product Type

SiC Mosfet without Diode

Channel Type

Single Switch

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

1.2kV

Series

DOSEMI

Package Type

Tape & Reel

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

55.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

86.6nC

Maximum Power Dissipation Pd

268W

Maximum Gate Source Voltage Vgs

22V

Forward Voltage Vf

3.85V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Starpower MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.

SiC power MOSFET

Low RDS(on)

Low inductance case avoid oscillations

ROHS

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy