STMicroelectronics N-Channel STH65N Type N-Channel MOSFET, 51 A, 650 V Enhancement, 7-Pin H2PAK-7 STH65N050DM9-7AG

View all MOSFETs

Subtotal (1 reel of 1000 units)*

Kr.44 803 00 

(exc. VAT)

Kr.56 004 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 29. juni 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 +Kr. 44,803Kr. 44 803,00

*price indicative

RS Stock No.:
481-127
Mfr. Part No.:
STH65N050DM9-7AG
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK-7

Series

STH65N

Mount Type

Surface

Pin Count

7

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Transistor Configuration

N-Channel

Maximum Operating Temperature

150°C

Length

15.25mm

Width

24.3 mm

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics N-Channel Power MOSFET is built on Advanced super-junction MDmesh DM9 technology, designed for medium to high voltage applications. It features extremely low RDS(on) per area and a fast-recovery diode, making it Ideal for high-efficiency switching. The DM9 silicon technology utilizes a multi-drain manufacturing process that enhances device structure and performance. With very low recovery charge (Qrr), fast recovery time (trr), and low RDS(on), this MOSFET is optimized for demanding bridge topologies and ZVS phase-shift converters.

Low gate charge and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Excellent switching performance thanks to the extra driving source pin

AEC-Q101 qualified

Related links