STMicroelectronics SCTH50N120-7 N-Channel SiC Power Module, 55 A, 1.2 kV Enhancement, 7-Pin H2PAK-7 SCTH50N120-7
- RS Stock No.:
- 204-3954
- Mfr. Part No.:
- SCTH50N120-7
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 633,05
(exc. VAT)
Kr. 791,31
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 49 | Kr. 633,05 |
| 50 - 99 | Kr. 557,81 |
| 100 - 249 | Kr. 501,35 |
| 250 - 499 | Kr. 488,50 |
| 500 + | Kr. 476,20 |
*price indicative
- RS Stock No.:
- 204-3954
- Mfr. Part No.:
- SCTH50N120-7
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | SiC Power Module | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | SCTH50N120-7 | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.065Ω | |
| Channel Mode | Enhancement | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type SiC Power Module | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series SCTH50N120-7 | ||
Package Type H2PAK-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.065Ω | ||
Channel Mode Enhancement | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very tight variation of on-resistance vs.
temperature
Very fast and robust intrinsic body diode
Low capacitance
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