STMicroelectronics Sct N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3-7
- RS Stock No.:
- 719-465
- Mfr. Part No.:
- SCT018H65G3-7
- Brand:
- STMicroelectronics
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Subtotal (1 unit)*
Kr. 171,14
(exc. VAT)
Kr. 213,92
(inc. VAT)
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- 300 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 4 | Kr. 171,14 |
| 5 + | Kr. 165,99 |
*price indicative
- RS Stock No.:
- 719-465
- Mfr. Part No.:
- SCT018H65G3-7
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | Sct | |
| Package Type | H2PAK-7 | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.6V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 385W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 79.4nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.8mm | |
| Width | 10.4 mm | |
| Length | 15.25mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series Sct | ||
Package Type H2PAK-7 | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.6V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 385W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 79.4nC | ||
Maximum Operating Temperature 175°C | ||
Height 4.8mm | ||
Width 10.4 mm | ||
Length 15.25mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very fast and robust intrinsic body diode
Very low RDS(on) over the entire temperature range
High speed switching performances
Source sensing pin for increased efficiency