STMicroelectronics SCTH90 Type N-Channel MOSFET, 116 A, 650 V Enhancement, 7-Pin H2PAK

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Subtotal (1 reel of 1000 units)*

Kr.279 813 00 

(exc. VAT)

Kr.349 766 00 

(inc. VAT)

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Units
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Per Reel*
1000 +Kr. 279,813Kr. 279 813,00

*price indicative

RS Stock No.:
201-0868
Mfr. Part No.:
SCTH90N65G2V-7
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

116A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK

Series

SCTH90

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

484W

Maximum Gate Source Voltage Vgs

22 V

Typical Gate Charge Qg @ Vgs

157nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

15.25mm

Height

10.4mm

Width

4.8 mm

Automotive Standard

No

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very high operating junction temperature capability (TJ = 175 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitances

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