Microchip TN0106 Type N-Channel Single MOSFETs, 3.4 A, 60 V Enhancement, 3-Pin TO-92 TN0106N3-G
- RS Stock No.:
- 598-395
- Mfr. Part No.:
- TN0106N3-G
- Brand:
- Microchip
Subtotal (1 bag of 1000 units)*
Kr.8 366 00
(exc. VAT)
Kr.10 458 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 05. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Bag* |
|---|---|---|
| 1000 + | Kr. 8,366 | Kr. 8 366,00 |
*price indicative
- RS Stock No.:
- 598-395
- Mfr. Part No.:
- TN0106N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TN0106 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Height | 0.82in | |
| Length | 0.205in | |
| Standards/Approvals | RoHS | |
| Width | 0.165 in | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TN0106 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Height 0.82in | ||
Length 0.205in | ||
Standards/Approvals RoHS | ||
Width 0.165 in | ||
Automotive Standard No | ||
The Microchip N Channel Enhancement-Mode Vertical low-threshold transistor is built using a vertical DMOS structure and a well-established silicon-gate manufacturing process. This design combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. Like all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Related links
- Microchip TN0106 N-Channel MOSFET 60 V, 3-Pin TO-92 TN0106N3-G
- Microchip 2N7008 Silicon N-Channel MOSFET Transistor 60 V, 3-Pin TO-92 2N7008-G
- Microchip VN0606 Silicon N-Channel MOSFET 60 V, 3-Pin TO-92 VN0606L-G
- Microchip VN2106 Silicon N-Channel MOSFET 60 V, 3-Pin TO-92 VN2106N3-G
- Microchip TN5325 Silicon N-Channel MOSFET 250 V, 3-Pin TO-92 TN5325N3-G
- Microchip TN5325 Silicon N-Channel MOSFET 250 V, 3-Pin TO-92 TN5325K1-G
- Microchip TN2640 Silicon N-Channel MOSFET 400 V, 3-Pin TO-92 TN2640N3-G
- Microchip VN0109 Silicon N-Channel MOSFET 90 V, 3-Pin TO-92 VN0109N3-G